| PART |
Description |
Maker |
| IXTK120N25 |
High Current MegaMOS FET
|
IXYS Corporation
|
| NID5003NT4 NID5003N |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK
Self-Protected FET with Temperature and Current Limit(带温度和电流限制的自保护FET)
42 V, 20 A, Single N−Channel, DPAK 20 A, 42 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET
Self-Protected FET with Temperature and Current Limit(甯?俯搴???垫???????淇??FET)
|
ONSEMI[ON Semiconductor]
|
| MAX5069DAUE MAX5069DAUET |
High-Frequency, Current-Mode PWM Controller with Accurate Oscillator and Dual FET Drivers
|
MAXIM - Dallas Semiconductor
|
| PS7341CL-1A PS7341CL-1A-A PS7341CL-1A-E3 PS7341CL- |
CURRENT LIMIT TYPE 6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET
|
California Eastern Laboratories
CEL[California Eastern Labs]
|
| PS7341C-1A PS7341C-1A-A PS7341CL-1A PS7341CL-1A-A |
CURRENT LIMIT TYPE 6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET
|
NEC
|
| XR494 XR2002 XR1468 XR-1468 XR1488 XR-1488 XR1488N |
DAA Module, Half Wave Ring Detection, CID 高电压，大电流达林顿晶体管阵
OPTOCOUPLER SGL TRANS-OUT 6-SMD
CAP 2200UF 10V ELECT FK SMD
OPTOCOUPLER SOLID STATE CURRENT SENSOR, 6 PIN SMD SMD
FET N-CHAN RON 10OHM LITELINK
Optocoupler with a single or darlington transistor output
From old datasheet system
High-Voltage, High-Current Darlington Transistor Arrays
|
Exar, Corp.
EXAR[Exar Corporation]
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| NP32N055ILE NP32N055HLE NP32N055HLE-AZ NP32N055 NP |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
32 A, 55 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
Nch MOS FET for High-current switching
|
Cypress Semiconductor, Corp.
NEC[NEC]
|
| NIF62514_06 NIF62514 NIF62514T1 NIF62514T1G NIF625 |
Self−protected FET with Temperature and Current Limit
Self-protected FET with Temperature and Current Limit(自保护型FET（带过温和过流保护）)
|
ONSEMI[ON Semiconductor]
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| IHSM-7832 IHSM-7832-RG3R9L IHSM-7832RG3R9L IHSM-78 |
High Current, Flame Retardant Encapsulated Inductor
High Current Surface Mount Inductor
High Current, Surface Mount Inductor 高电流，表面贴装电感
1 ELEMENT, 1.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
VISHAY DALE
|
